EMT18 / umt18n transistors general purpose transistors (dual transistors) EMT18 / umt18n z z z z features 1) two 2sa2018 chips in a emt or umt package. 2) mounting possible with emt3 or umt3 automatic mounting machines. 3) transistor elements are independent, eliminating interference. z z z z structure epitaxial planar type npn silicon transistor the following characteristics apply to both tr 1 and tr 2. z z z z equivalent circuit EMT18 / umt18n (3) (2) (1) (4) (6) (5) tr 2 tr 1 z z z z absolute maximum ratings (ta=25 c) z z z z external dimensions (units : mm) rohm : emt6 EMT18 rohm : umt6 eiaj : sc-88 umt18n abbreviated symbol : t18 abbreviated symbol : t18 each lead has same dimensions each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature power dissipation ? 1 120mw per element must not be exceeded. parameter symbol limits unit v cbo ? 15 v ? 12 v v v ceo v ebo ? 6 i c ma ? 500 tj 150 ?c tstg ? 55 + 150 ?c p c 150 (total) mw ? 1
EMT18 / umt18n transistors z z z z electrical characteristics (ta=25 c) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency collector-emitter saturation voltage output capacitance parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) cob min. ? 15 ? 12 ? 6 ? ? 270 ? ? ? ? ? ? ? ? ? 100 6.5 ? ? ? ? 0.1 ? 0.1 680 ? 250 ? vi c = ? 1 0 a i c = 1ma i e = ? 1 0 a v cb = ? 15 v v eb = ? 6 v v ce = ? 2 v, i c = ? 10ma i c /i b = ? 20 0ma/ ? 10ma v v a a ? mv pf typ. max. unit conditions f t ? 260 ? v ce = ? 2v, i e = 10ma, f = 100mhz v cb = ? 10v, i e = 0a, f = 1mhz mhz z z z z packaging specifications package code tn 3000 taping basic ordering unit (pieces) umt18n t2r 8000 EMT18 type z z z z electrical characteristic curves 0 1 2 5 20 50 100 200 500 1000 10 base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics collector current : i c (ma) 1.5 1.0 0.5 v ce =2v ta=125 ? c ta=25 ? c ta= -40 ? c 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.2 dc current gain vs. collector current 1 dc current gain : h fe 500 2 5 10 200 500 1000 20 50 100 ta=25 ? c ta= -40 ? c ta=125 ? c v ce =2v 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.3 collector-emitter saturation voltage vs. collector current ( i ) 1 collector saturation voltage : v ce (sat) (v) 500 2 5 10 200 500 1000 20 50 100 ta=25 ? c ta= -40 ? c ta=125 ? c i c /i b =20
EMT18 / umt18n transistors 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) 1 collector saturation voltage : v ce(sat) (mv) 500 2 5 10 200 500 1000 20 50 100 ta=25 ? c i c / i b =50 i c / i b =20 i c / i b =10 fig.4 collector-emitter saturation voltage vs. collector current 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) 10 baser saturation voltage : v be (sat) (mv) 500 20 50 100 2000 5000 10000 200 500 1000 ta=25 ? c ta= -40 ? c ta=125 ? c i c /i b =20 fig.5 base-emitter saturation voltage vs. collector current 1 2 5 10 20 50 100 200 1000 emitter current : i c (ma) fig.6 gain bandwidth product vs. emitter current 1 transition frequency : f t (mhz) 500 2 5 10 200 500 1000 20 50 100 v ce =2v ta=25 ? c 0.2 0.1 0.5 1 2 5 10 20 50 100 1 2 5 10 20 50 100 200 500 1000 ta = 25 ? c f=1mhz i e =0a emitter input capacitance : cib (pf) emitter to base voltage : v eb ( v) fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage cib cob
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